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TESP-HAR

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Geometry
Rectangular
Tip Radius (nm)
Nom: 10
Max: 15
Frequency (KHz)
Nom: 320
Min: 230
Max: 410
Length (µm)
Nom: 125
Min: 110
Max: 140
Spring Const (N/m)
Nom: 42
Min: 20
Max: 80
Width (µm)
Nom: 40
Min: 30
Max: 50
2 Total Related Products
FIB4-200

Bruker's Focused Ion Beam (FIB) line of probes are the industry standard silicon probe for deep trench measurement!

All FIB probes are based upon a ~320kHz, 40N/m cantilever for use in standard tapping mode on any AFM.

 

The FIB4-200 has an aspect ratio of 20:1, a 200nm wide spike at 4um from the tip apex.

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TESPA-HAR
42N/m, 320kHz, High Aspect Ratio Tip (5:1), Aluminum Reflective Coating

High aspect ratio (HAR) probes are based upon Bruker technology and made from Bruker TESP probes using focused ion beam milling techniques.  The HAR process modifies the top portion of the tip to an aspect ratio of at least 5:1.  These probes are ideal for Tappingmode imaging on samples with tall/deep geometries, such as semiconductor trench imaging.
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Order a free TESP-HAR sample
Price: $1,039.50 (USD)
Sold in packs of 10
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Probe Selection Guide
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+1 (800) 715-8440
Overview
42N/m, 320kHz, High Aspect Ratio (5:1), No Reflecting Coating
Tip Specification
TESP-HAR Tip Image
High aspect ratio probe based upon Veeco technoloogy and made from our TESP. Aspect ratio of 5:1 at 1um from tip apex.
Tip Height (h): 10 - 15 µm
Front Angle (FA): 5 ± 1º
Back Angle (BA): 5 ± 1º
Side Angle (SA): 5 ± 1º
Cantilever Specification
TESP-HAR Cantilever Image
Material: 0.01 - 0.025 Ωcm Antimony (n) doped Si
Geometry: Rectangular
Cantilevers Number: 1
Cantilever Thickness (Nom): 4µm
Cantilever Thickness (RNG): 3.5 - 4.5µm
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